Increased thermal performance over ceramics; Reduced substrate costs

IGBT/MOSFET IGBT/MOSFET Transistors - Polara™ can also satisfy the need for conductive layers, dielectric isolation and thermal spreading, with an increased thermal performance and reduced costs. Discrete transistor devices can generate from 100-300 W/cm2 of waste heat at the die level. Traditional packaging includes a die, metallized ceramic substrate, and metallic base plate. The benefits of Polara also extend to module packages.